Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).

The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its ...

FinFET transistors are now in production at the major foundries, having gone from drawing board to products on the shelf in record time. FinFET adoption has been growing steadily because they deliver ...

Since the inception of the integrated-circuit (IC) industry, design metrics such as performance, power, area, cost, and time-to-market have remained the same. In fact, Moore’s law is all about ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

SEMATECH experts reported on innovative approaches to realize advanced CMOS logic and memory device technologies and 3D through-silicon via (TSV) manufacturing at the International VLSI Technology, ...

The IC industry is already weeding out the candidates. In 2005, the Semiconductor Research Corp. (SRC), a chip R&D consortium, launched the Nanoelectronics Research Initiative (NRI), a group that is ...

Belgian lab IMEC was founded on semiconductor process research, and has grown into one of the two organisations in the world that companies partner with for advanced process research. The other is IBM ...

At DAC this year, it was impossible to go to a vision talk, keynote, or other high-profile event without hearing about how FinFETs were going to save us and keep Moore's Law going for a little longer.