EDN

STMicroelectronics STV250N55F3: 250A MOSFET integrates ribbon bonding and surface-mount power package

The 250A STV250N55F3 power MOSFET combines ribbon bonding with a surface-mount power package to deliver 1.5-mΩ on-resistance with the ability to handle high currents for 55V applications. The MOSFET ...
Electronic Design

Power MOSFET Pairs Ribbon Bonding And SMT Package

Emerging as the first discrete power MOSFET to combine ribbon bonding with the company’s surface-mount PowerSO-10 package, the 250A STV250N55F3 specifies a typical on-resistance of 1.5 milliOhms and ...
Semiconductor Engineering

Packaging Demands For RF And Microwave

RF and microwave integrated circuits (ICs), monolithic microwave ICs (MMICs) and systems in package (SiPs) are vital for a wide range of applications. These include mobile phones, wireless local-area ...
Electronic Design

MOSFET Exploits Ribbon Technology

GENEVA, SWITZERLAND—A power MOSFET developed by STMicroelectronics takes advantage of the company’s ribbon-bonding technology. This delivers a low typical RDS(on) of 800 micro-ohms, which ST claims is ...
Semiconductor Engineering

Packaging Demands For RF And Microwave Devices

RF and microwave integrated circuits (ICs), monolithic microwave ICs (MMICs) and systems in package (SiPs) are vital for a wide range of applications. These include mobile phones, wireless local-area ...