Abstract: This study aims to explore the solder fatigue lifetime of a developed high-voltage (1.7 kV/100 A) SiC power MOSFET module for on-board chargers (OBCs) subjected to power cycling test (PCT) ...
Abstract: Silicon carbide (SiC) power devices offer high switching speeds and power densities but are constrained by significant parasitic inductance and limited thermal dissipation capability.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results