IEEE

Realization of Steep-Slope Transistor Using 1-D Gate-All-Around Carbon Nanotubes With Broken-Gap Source Structure

Abstract: Carbon nanotubes (CNTs), as a 1-D material, have become a favorable material for replacing Silicon to continue Moore’s law. Herein, we propose a gate-all-around cold source FETs (CSFETs) ...
Semiconductor Engineering

Cryogenic Etch: A Key Enabler Of 3D NAND

Increased storage needs at the edge and in the cloud are fueling rising demand for higher-capacity flash memory across multiple applications. Released every 12 to 18 months, 3D NAND scaling outpaces ...
The Hill

Tuberville on Mamdani using Quran at his swearing-in: ‘Enemy is inside the gates’

Alabama Sen. Tommy Tuberville (R) on Wednesday slammed incoming New York City Mayor Zohran Mamdani for being sworn in with the Quran, the sacred scripture of Islam. “The enemy is inside the gates,” ...
Atlanta Blackstar

‘He Has a Karoline Fixation’: Trump Latches Onto ‘Karoline Leavitt’ Profile Weeks After Using His Own Creepy Nickname for Her

President Donald Trump got unusually locked in on a series of social media posts tied to his press secretary, and the longer it dragged on, the harder it will be for him to explain. At first glance, ...
IEEE

Impact of Strain on Sub-3 nm Gate-All-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach

Abstract: Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology ...
fandomwire

Why Baldur’s Gate 4 Is Probably Not Happening: Larian Wasn’t Excited by the “D&D Thing”

Freed from D&D’s structure, Larian is building systems designed purely for video games, not adapted from pen-and-paper rules. So while Baldur’s Gate 4 will eventually exist, it won’t be the natural ...