Combining two TLx431 regulators together to make a programmable gain current mirror that can be also used for a current loop ...

Vertical GaN power devices could benefit from better p-type contacts, realised by magnesium implantation and ultra-high-pressure annealing Engineers from North Carolina State University, Adroit ...

The retaliatory strikes came on Saturday, a day after Israel killed top Iranian military leaders and scientists and destroyed an aboveground nuclear enrichment plant near Natanz. Farnaz Fassihi Isabel ...

The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the “atomic level manufacturing” of semiconductors. The basic idea of ...

Abstract: A general model is developed for forward-biased p-n junctions with arbitrary doping concentrations biased at any injection level. It goes beyond the commonly practiced depletion ...

In this tutorial, we propose a virtual/computational experiment, relateated to a PN junction, in the Mathematica computing environment. Now we can reconstruct the voltage-current characteristic of the ...

In the previous tutorial, we discussed the physical mechanism that determines the increasing trend of the reverse saturation current of a pn junction, as a function of temperature. In this article, we ...