Investigation of the Impact of Angles and Rotation of Low-Energy Protons in SRAM Cells Down to 16 nm
Abstract: This work presents the single-event upset (SEU) responses of four SRAM devices (65, 40, 28, and 16 nm) measured at different angles of incidence and orientation of the device with respect to ...
Abstract: Virtual rotation plays a crucial role in compensating for circumferential errors of the hemispherical resonator gyroscope (HRG) operating in whole-angle (WA) mode. To eliminate undesirable ...
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