Abstract: We report for the first time that replacement metal gate (RMG) work function metal (WFM) modulates the interface defects in Silicon and SiGe MOSFETs. Changing the effective work function ...
Abstract: Ferroelectric-field-effect transistors (FeFETs) are promising for future nonvolatile-memory and computation-in-memory applications. This brief presents a new approach for logic-in-memory by ...
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