Infineon develops first 300mm power GaN wafer - News
Sep 11, 2024 · Infineon Technologies has succeeded in developing the world’s first 300 mm power GaN wafer technology, claiming to be the first company in the world to master this groundbreaking technology in an existing and scalable high-volume manufacturing environment.
Ennostar and PlayNitride join forces to develop Micro LED
Nov 14, 2022 · Ennostar’s subsidiary Epistar and PlayNitride’s subsidiary PlayNitride Display have announced that they have teamed up to build a production line for 6-inch Micro LED epi-wafers.
Nexperia: Expanding GaN and SiC operations - News
Sep 16, 2024 · Investing phenomenal sums in infrastructure that enables the production of SiC and GaN devices is the new norm. In this regard the likes of Infineon, Wolfspeed and Innoscience are making the biggest splashes, by building fabs of breath-taking proportions that are propelling their capacity for high-volume production of wide bandgap power devices.
EPC announces tiny GaN FET with 1mΩ On-Resistance - News
EPC has launched the 100V, 1 mOhm EPC2361. This is claimed to be the lowest on-resistance GaN FET on the market offering double the power density compared to EPC’s prior-generation products.
Cubic SiC: Tomorrow’s champion for power electronics?
Nov 3, 2022 · The uptake of the Tesla is welcome on many fronts. Its lack of a combustion engine helps to trim carbon emissions; it is relatively quiet, thanks to battery power; and, much closer to home for those within the compound semiconductor industry, its early adoption of SiC power electronics is driving sales of these devices.
Hybrid bonding: Going for GOLD - News - Compound …
Dec 3, 2021 · Hybrid bonding provides attainable scaling for packaging of compound semiconductor devices in copper or gold . BY JOHN GHEKIERE FROM CLASSONE TECHNOLOGY
VisIC, Heraeus and PINK collaborate on GaN EV module
Jul 29, 2024 · GaN company VisIC Technologies has partnered with materials company Heraeus Electronics, and sintering equipment firm PINK to develop an advanced power module using D3GaN technology.
Contact us - Compound Semiconductor
Headline: Five or six words that capture the key accomplishment Opening line(s): A statement of the big achievement, and who did it. This should be no more than a couple of sentences First section: The impact that this work would have. For example, if you have made the world's first green laser chip, then this promises to have big implications for RGB displays.
JEDEC Publishes GaN transistor Guidelines - News - Compound …
Mar 2, 2020 · JEDEC Solid State Technology Association has announced the publication of 'JEP180: Guideline for Switching Reliability Evaluation Procedures for GaN Power Conversion Devices'.
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